Center for Advanced Vehicular Systems
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Project
Silicon Carbide Research with Semisouth
Funded by Air Force Laboratories
In Collaboration with:
Semi South
Air Force Laboratories
PI: Paul Martin
Team Members: Volodymyr Bondarenko, Jeffrey Wyatt, Guoyun (Tammy) Tian
Description:
Silicon carbide has been identified as a material with unique advantages for the development of high power electronic devices for a wide variety of defense systems. Advances in SiC vertical junction field effect transistors (VJFETS) at SemiSouth Laboratories, Inc. and at Mississippi State University have demonstrated the potential of this technology. This task seeks to extend the present state of the art 600V technology to enable 1200V VJFETS and to achieve a device technology readiness level to a target of TRL 6. The goal of this effort includes monitoring each lot with a statistically adequate sample, as well as performing an in-depth investigation to determine degradation activation energies and lifetime distribution models for predicting device lifetimes at operational temperatures. MSU is responsible for on-wafer device testing, packaging, packaged component testing and reliability evaluation.
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